ldd425/66f-xx doc. no : qw0905- rev. : a date : - 2005 12 - apr. dual digit led display (0.4 inch) ldd425/66f-xx data sheet ligitek electronics co.,ltd. property of ligitek only
note : 1.all dimension are in millimeters and (lnch) tolerance is ? 0.25(0.01") unless otherwise noted. 2.specifications are subject to change without notice. ldd425/66f-xx package dimensions part no. ligitek electronics co.,ltd. property of ligitek only page 1/7 r 1.3(0.051") 5.2 ? 0.5 20.2 (0.795") pin no.1 2.54x4= 10.16(0.40") 0.51 typ 10.16 (0.4") ldd425/66f-xx ligitek dig.1 dig.2 6.9 (0.272") 16.0 (0.63") 12.7 (0.5") 6.9 (0.27") a b c d e f g dp
ldd4256f-xx ldd4266f-xx page ligitek electronics co.,ltd. property of ligitek only internal circuit diagram part no. 2/7 ldd425/66f-xx b dig.1 6 7 a 9 8 3 1 42 g f e d c 10 dp c b a dig.2 dp f e dg 5 dig.1 b 76 a 9 3 41 8 2 g f de c 10 c b a dp dig.2 dp g f e d 5
ligitek electronics co.,ltd. property of ligitek only part no. electrical connection 3/7 page ldd425/66f-xx cathode a common anode dig.2 cathode e cathode d anode a common cathode dig.2 anode e anode d pin no. 9 10 8 6 7 5 9 10 8 6 7 5 ldd4256f-xx 3 4 2 pin no. 1 3 4 2 1 ldd4266f-xx anode dp anode c anode b anode f anode g cathode dp cathode c cathode b cathode f cathode g common anode dig.1 common cathode dig.1
common anode ldd425/66f-xx 4/7 page 30 hrf 90 75 mw ma ma unit symbol i f i fp pd parameter ligitek electronics co.,ltd. property of ligitek only ratings absolute maximum ratings at ta=25 j forward current per chip power dissipation per chip peak forward current per chip (duty 1/10,0.1ms pulse width) part no. j j 2:1 iv-m iv(mcd) vf(v) electrical typ. min. 34 18 typ. min. 1.7 1.5 2.4 max. t opr tstg 20 630 common cathode or anode f d ( nm) ??f (nm) chip emitted red algainp material -25 ~ +85 -25 ~ +85 common cathode note : 1.the forward voltage data did not including ? 0.1v testing tolerance. 2. the luminous intensity data did not including ? 15% testing tolerance. part selection and application information(ratings at 25 ) j solder temperature 1-16 inch below seating plane for 3 seconds at 260 j part no ldd4266f-xx ldd4256f-xx storage temperature operating temperature g a 10 ir reverse current per any chip electrostatic discharge esd 2000 v
ldd425/66f-xx 5/7 page ligitek electronics co.,ltd. property of ligitek only if=20ma test condition if=20ma if=20ma if=10ma volt vf unit nm g a nm f d iv mcd part no. reverse current any chip spectral line half-width forward voltage per chip dominant wavelength luminous intensity per chip parameter test condition for each parameter symbol ??f luminous intensity matching ratio iv-m ir vr=5v
relative intensity@20ma 600 wavelength (nm) 550 0 700 650 0.5 0.5 relative intensity@20ma normalize@25 j forward voltage@20ma normalize @25 j 20 ambient temperature( j ) fig.5 relative intensity vs. wavelength 1.0 ambient temperature( j ) 0.8 -0 -20 -40 60 40 20 80 100 0 -40 -20 -0 60 40 80 100 fig.4 relative intensity vs. temperature 2.5 1.0 0.9 1.1 1.5 1.0 2.0 fig.3 forward voltage vs. temperature 1.2 3.0 100 relative intensity normalize @20ma forward current(ma) forward current(ma) forward voltage(v) 1.5 1.0 0.1 2.5 2.0 3.0 1.0 10 0 1.0 10 0.5 1.0 1.5 2.0 100 1000 fig.2 relative intensity vs. forward current fig.1 forward current vs. forward voltage 1000 3.5 2.5 typical electro-optical characteristics curve ligitek electronics co.,ltd. property of ligitek only 3.0 hrf chip part no. ldd425/66f-xx page6/7
ldd425/66f-xx page 7/7 description reference standard mil-std-883:1008 jis c 7021: b-10 mil-std-750: 1026 mil-std-883: 1005 jis c 7021: b-1 jis c 7021: b-12 test condition test item operating life test high temperature storage test low temperature storage test 1.under room temperature 2.if=10ma 3.t=1000 hrs (-24hrs, + 72hrs) 1.ta=105 j? 5 j 2.t=1000 hrs (-24hrs, + 72hrs) 1.ta=-40 j? 5 j 2.t=1000 hrs (-24hrs, + 72hrs) part no. reliability test: this test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. ligitek electronics co.,ltd. property of ligitek only the purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. mil-std-202:103b jis c 7021: b-11 mil-std-202: 107d mil-std-750: 1051 mil-std-883: 1011 mil-std-202: 210a mil-std-750: 2031 jis c 7021: a-1 mil-std-202: 208d mil-std-750: 2026 mil-std-883: 2003 jis c 7021: a-2 thermal shock test high temperature high humidity test solder resistance test 1.ta=105 j? 5 j &-40 j? 5 j (10min) (10min) 2.total 10 cycles 1.ta=65 j? 5 j 2.rh=90 %~95% 3.t=240hrs ? 2hrs 1.t.sol=260 j? 5 j 2.dwell time= 10 ? 1sec. 1.t.sol=230 j? 5 j 2.dwell time=5 ? 1sec solderability test this test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. this test intended to see soldering well performed or not. the purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. the purpose of this test is the resistance of the device under tropical for hous. the purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
|
